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CZ silicon ingots spec. Wafer spec.
Type / Dopant P type, Boron doped
Thickness: 200 �20 祄
Diameter: 150 �1mm
Orientation: <100> �3
Dimension: 125 �0.5mm 156�0.5mm
Lifetime > 1.2 祍
Resistivity 0.5-3.0 Ohmcm
Oxygen content: 1�1018 / Cm3
TTV: < 40 祄
Carbon content: 5�1016 / Cm3
Bow: <50 祄
No Saw mark ,Edge flaw, Chipping, Crack
As clean as wafer
Shape Pseudo square
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