All categories
Featured selections
    Trade Assurance
    Buyer Central
    Help Center
      Get the app
      Become a supplier

      10.0 * 10.5 mm2 Fedoped C-plane Freestanding GaN Substrate semiconductor for RF Device

      No reviews yet
      Shanghai Ganova Electronic Information Co., Ltd.2 yrsCN
      Hover to zoom in

      Key attributes

      Other attributes

      Place of Origin
      China
      Brand Name
      GaNova
      Model Number
      JDCD01-001-003
      Type
      GaN Wafer
      Item
      GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10
      Dimensions
      10 x 10.5 mm2
      Thickness
      350 ±25μm
      Conduction Type
      N-type N-type Semi-Insulating
      Orientation
      C plane (0001) off angle toward M-axis 0.35 ±0.15°
      TTV
      ≤ 10μm
      BOW
      - 10μm ≤ BOW ≤ 10μm
      Dislocation Density
      From 1 x 10^5 to 3 x 10^6cm-² (calculated by CL)*
      Macro Defect Density
      0 cm-²
      Useable Area
      > 90% (edge exclusion)

      Packaging and delivery

      Packaging Details
      carton
      Port
      Shanghai

      Supply Ability

      Supply Ability
      100000 Piece/Pieces per Month
      Show more

      Product descriptions from the supplier

      >= 6 pieces
      $265.00

      Variations

      Total options:
      Select now

      Shipping

      Shipping solutions for the selected quantity are currently unavailable

      Membership benefits

      Quick refundsView more

      Protections for this product

      Secure payments

      Every payment you make on Alibaba.com is secured with strict SSL encryption and PCI DSS data protection protocols

      Refund policy & Easy Return

      Claim a refund if your order doesn't ship, is missing, or arrives with product issues, plus free local returns for defects
      Alibaba.com protects all your orders placed and paid on the platform with