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4 inch GaN-on-Silicon HEMT Epi-wafer semiconductor material for Power device
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#12
Most popular in Silicon Semiconductors
Shanghai Ganova Electronic Information Co., Ltd.
2 yrs
CN
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Key attributes
Other attributes
Place of Origin
China
Brand Name
GaNova
Model Number
2JDWY03-002-002
Type
GaN Wafer
Dimensions
2 inch/4 inch/6inch
Resistivity(300K)
<350 Ω/
Electron Concentration
>9.0E12 cm-²
Mobility
> 1800 cm2/(V.S)
Substrate Structure
Packaged in a class 100 clean room environment
Packaging and delivery
Packaging Details
carton
Supply Ability
Supply Ability
100000 Piece/Pieces per Month
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Product descriptions from the supplier
>= 5 pieces
$218.86
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