4 inch N-type SSP Si-doped GaN-on-Sapphire Epi-wafer for LED laser PIN Device

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Shanghai Ganova Electronic Information Co., Ltd.2 yrs

CN

Key attributes

Other attributes

Place of Origin

China

Brand Name

GaNova

Model Number

2JDWY03-001-023

Type

GaN Wafer

Item

GaN-T-C-N-C100

Dimensions

100 ± 0.2 mm

Thickness/Thickness STD

4.5 ± 0.5 μm / < 3%

Orientation Flat of GaN

(1-100) 0 ± 0.2 °, 30 ± 1 mm

Conduction Type

N-type

*XRD FWHMs

(0002) < 300 arcsec,(10-12) < 400 arcsec

Orientation of Sapphire

C plane (0001) off angle toward M-axis 0.2 ± 0.1 °

Orientation Flat of Sapphire

(11-20) 0 ± 0.2 °, 30 ± 1 mm

Sapphire Polish

Single side polished (SSP) / Double side polished (DSP)

Useable Area

> 90% (edge and macro defects exclusion)

Packaging and delivery

Packaging Details

carton

Supply Ability

Supply Ability

100000 Piece/Pieces per Month

Product descriptions from the supplier

5 - 24 pieces

$291.06

>= 25 pieces

$277.20

Variations

Total options:

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