Place of Origin
Guangdong, China
Application
General Purpose
Supplier Type
Original manufacturer, Retailer
Media Available
datasheet, Photo, EDA/CAD Models
Brand
MOSFET MBQ60T65 TO247
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Operating Temperature
-40°C ~ 85°C (TJ)
Mounting Type
Through Hole
Resistor - Base (R1)
standard
Resistor - Emitter Base (R2)
standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
60A
Rds On (Max) @ Id, Vgs
11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250ua
Gate Charge (Qg) (Max) @ Vgs
160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
3700pF @ 25V
Current Rating (Amps)
Standard
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Applications
General Purpose
Payment
Paypal\TT\Western Union\Trade Assurance
LEAD TIME
1-3 Working Days