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High Quality MOS Transisotor MOSFET N-CH 600V 10A TO263 IXTA10N60P

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Shenzhen Jeking Electronic Corp.Multispecialty supplier9 yrsCN

Key attributes

Industry-specific attributes

Model Number
IXTA10N60P
Type
IGBT Transistor
Brand Name
original brand
Package Type
Surface Mount

Other attributes

Mounting Type
SMD/SMT
Description
TRANSISTOR
Place of Origin
California, United States
Package / Case
TO-220-3
Brand
MOSFET N-CH 600V 10A D2-PAK
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V 250uA
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1610pF @ 25V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Type
Field-Effect Transistor
Part Number
IXTA10N60P
Description
MOSFET N-CH 600V 10A TO263
FET Type
N-Channel
Drain to Source Voltage
600V
Current @ 25°C
10A (Tc)
Vgs(th) (Max) @ Id
5.5V @ 250uA
Gate Charge @ Vgs
32nC @ 10V
Input Capacitance @ Vds
5.5V @ 250uA
Power Dissipation (Max)
200W (Tc)

Packaging and delivery

Packaging Details
Tube

Supply Ability

Supply Ability
88000 Piece/Pieces per Day Standar Packing
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Lead time

Product descriptions from the supplier

100 - 499 pieces
$1.90
500 - 999 pieces
$1.70
>= 1000 pieces
$1.60

Quantity

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Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

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