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      IGBT BIPO 650V 60A TO247-3 transistor STGW60H65DFB G60H65DFB

      No reviews yet4 orders
      Shenzhen Yuzens Technologies Co. Ltd.10 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      STGW60H65DFB

      Type
      IGBT Transistor

      Brand Name
      Original Brand

      Package Type
      Throught Hole

      Other attributes

      Mounting Type
      Tube

      Description
      transistor

      Place of Origin
      Melaka, Malaysia

      Package / Case
      Tube

      Type
      MOSFET

      Operating Temperature
      -55°C ~ 175°C (TJ)

      Series
      -

      D/C
      New

      Application
      General Purpose

      Supplier Type
      Retailer

      Cross Reference
      -

      Media Available
      datasheet, Photo

      Brand
      electronic component

      Current - Collector (Ic) (Max)
      -

      Voltage - Collector Emitter Breakdown (Max)
      -

      Vce Saturation (Max) @ Ib, Ic
      -

      Current - Collector Cutoff (Max)
      -

      DC Current Gain (hFE) (Min) @ Ic, Vce
      -

      Power - Max
      -

      Frequency - Transition
      -

      Operating Temperature
      -

      Mounting Type
      Through Hole

      Resistor - Base (R1)
      -

      Resistor - Emitter Base (R2)
      -

      FET Type
      -

      FET Feature
      -

      Drain to Source Voltage (Vdss)
      -

      Current - Continuous Drain (Id) @ 25°C
      -

      Rds On (Max) @ Id, Vgs
      -

      Vgs(th) (Max) @ Id
      -

      Gate Charge (Qg) (Max) @ Vgs
      --

      Input Capacitance (Ciss) (Max) @ Vds
      -

      Frequency
      -

      Current Rating (Amps)
      -

      Noise Figure
      -

      Power - Output
      --

      Voltage - Rated
      -

      Drive Voltage (Max Rds On, Min Rds On)
      -

      Vgs (Max)
      -

      IGBT Type
      --

      Configuration
      -

      Vce(on) (Max) @ Vge, Ic
      -

      Input Capacitance (Cies) @ Vce
      -

      Input
      -

      NTC Thermistor
      -

      Voltage - Breakdown (V(BR)GSS)
      -

      Current - Drain (Idss) @ Vds (Vgs=0)
      -

      Current Drain (Id) - Max
      --

      Voltage - Cutoff (VGS off) @ Id
      -

      Resistance - RDS(On)
      -

      Voltage
      -

      Voltage - Output
      --

      Voltage - Offset (Vt)
      -

      Current - Gate to Anode Leakage (Igao)
      -

      Current - Valley (Iv)
      -

      Current - Peak
      --

      Applications
      circuit board

      Transistor Type
      -

      unit price
      subject to saleman's quotation

      email
      ela@ yuzens.com

      skype
      Yuzens-ela

      item
      STGW60H65DFB

      product
      STGW60H65DFB transistor

      Packaging and delivery

      Packaging Details
      Carton packing

      Port
      Shenzhen

      Selling Units:
      Single item

      Single package size:
      25X15X5 cm

      Single gross weight:
      3.000 kg

      Supply Ability

      Supply Ability
      10000 Piece/Pieces per Month

      Show more

      Lead time

      Quantity (pieces)1 - 10 > 10
      Lead time (days)2To be negotiated
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 1 piece
      Sample price:
      $8.00/piece

      Customization

      Customized packaging
      Min. order: 100000
      For more customization details, message supplier

      Know your supplier

      Shenzhen Yuzens Technologies Co. Ltd.
      10 yrsLocated in CN

      Order with confidence

      Evaluated as top-rated supplier
      View more productsView profile

      Product descriptions from the supplier

      10 - 1999 pieces
      $7.00
      >= 2000 pieces
      $1.95

      Variations

      Total options:
      Select now

      Shipping

      Shipping solutions for the selected quantity are currently unavailable
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 1 piece
      Sample price:
      $8.00/piece

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