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IRF250 Transistor
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IRF250 Transistor

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3 Piece/Pieces (Min. Order)
Port:
NEWARK
Payment:
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Overview
Specifications
Brand Name:
AMERICAN MICROSEMICONDUCTOR
Model Number:
IRF250
Packaging & Delivery
Delivery Detail:
IN STOCK

Specifications

N-channel Enhancement-mode Power Field-effect Transistor. Drain-sourge Voltage 200V. Continuous Drain Current (at TC 25deg) 30A

Military/High-Rel :   N
V(BR)DSS (V) :  200
V(BR)GSS (V) :  20
I(D) Max. (A) :  30
I(DM) Max. (A) Pulsed I(D) :  19
@Temp (C) :  100
IDM Max (@25C Amb) :  120
@Pulse Width (s) (Condition) :
Absolute Max. Power Diss. (W) :  150#
Minimum Operating Temp (C) :  -55
Maximum Operating Temp (C) :  150
Thermal Resistance Junc-Case :  .83
Thermal Resistance Junc-Amb. :  30
V(GS)th Max. (V) :  4.0
V(GS)th (V) (Min) :  2.0
@(VDS) (V) (Test Condition) :  20
@I(D) (A) (Test Condition) :  250m
I(DSS) Max. (A) :  25u
@V(DS) (V) (Test Condition) :  160
@Temp (C) (Test Condition) :  25
I(GSS) Max. (A) :  100n
@V(GS) (V) (Test Condition) :  20
r(DS)on Max. (Ohms) :  90m
@V(GS) (V) (Test Condition) :  10
@I(D) (A) (Test Condition) :  30
g(fs) Min. (S) Trans. conduct. :  9.0
g(fs) Max; (S) Trans. conduct; :
@V(DS) (V) (Test Condition) :  15
@I(D) (A) (Test Condition) :  19
C(iss) Max. (F) :  3.5n
@V(DS) (V) (Test Condition) :  25
@V(GS) (V) (Test Condition) :  0.0
@Freq. (Hz) (Test Condition) :  1.0M
td(on) Max (s) On time delay :  35n
t(r) Max. (s) Rise time :  190n
t(d)off Max. (s) Off time :  170n
t(f) Max. (s) Fall time. :  130n
Package Style :  TO-204AE
Mounting Style :  T
Description : 
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