-
12 Piece/Pieces
-
-
-
-
-
-
-
1000 Piece/Pieces
-
Hi,
-
For Buyers
- Source Products & Suppliers
- By Category
- Get Quotations
- Wholesale Checkout
- Trade Services
- Business Identity
- Trade Assurance
- Secure Payment
- e-Credit Line
- Inspection Service
- Community
- Trade Intelligence
- Discussion Forums
- Trade Answers
- For Suppliers
- Help
- Trade Assurance
- About Alibaba Group
- About 120 results:
- Integrated Circuits (102) , Transistors (11)
Quick Details
| Brand Name: |
AMERICAN MICROSEMICONDUCTOR
|
Model Number: |
IRF250
|
Specifications
N-channel Enhancement-mode Power Field-effect Transistor. Drain-sourge Voltage 200V. Continuous Drain Current (at TC 25deg) 30A
Military/High-Rel : N
V(BR)DSS (V) : 200
V(BR)GSS (V) : 20
I(D) Max. (A) : 30
I(DM) Max. (A) Pulsed I(D) : 19
@Temp (C) : 100
IDM Max (@25C Amb) : 120
@Pulse Width (s) (Condition) :
Absolute Max. Power Diss. (W) : 150#
Minimum Operating Temp (C) : -55
Maximum Operating Temp (C) : 150
Thermal Resistance Junc-Case : .83
Thermal Resistance Junc-Amb. : 30
V(GS)th Max. (V) : 4.0
V(GS)th (V) (Min) : 2.0
@(VDS) (V) (Test Condition) : 20
@I(D) (A) (Test Condition) : 250m
I(DSS) Max. (A) : 25u
@V(DS) (V) (Test Condition) : 160
@Temp (C) (Test Condition) : 25
I(GSS) Max. (A) : 100n
@V(GS) (V) (Test Condition) : 20
r(DS)on Max. (Ohms) : 90m
@V(GS) (V) (Test Condition) : 10
@I(D) (A) (Test Condition) : 30
g(fs) Min. (S) Trans. conduct. : 9.0
g(fs) Max; (S) Trans. conduct; :
@V(DS) (V) (Test Condition) : 15
@I(D) (A) (Test Condition) : 19
C(iss) Max. (F) : 3.5n
@V(DS) (V) (Test Condition) : 25
@V(GS) (V) (Test Condition) : 0.0
@Freq. (Hz) (Test Condition) : 1.0M
td(on) Max (s) On time delay : 35n
t(r) Max. (s) Rise time : 190n
t(d)off Max. (s) Off time : 170n
t(f) Max. (s) Fall time. : 130n
Package Style : TO-204AE
Mounting Style : T
Description :
V(BR)DSS (V) : 200
V(BR)GSS (V) : 20
I(D) Max. (A) : 30
I(DM) Max. (A) Pulsed I(D) : 19
@Temp (C) : 100
IDM Max (@25C Amb) : 120
@Pulse Width (s) (Condition) :
Absolute Max. Power Diss. (W) : 150#
Minimum Operating Temp (C) : -55
Maximum Operating Temp (C) : 150
Thermal Resistance Junc-Case : .83
Thermal Resistance Junc-Amb. : 30
V(GS)th Max. (V) : 4.0
V(GS)th (V) (Min) : 2.0
@(VDS) (V) (Test Condition) : 20
@I(D) (A) (Test Condition) : 250m
I(DSS) Max. (A) : 25u
@V(DS) (V) (Test Condition) : 160
@Temp (C) (Test Condition) : 25
I(GSS) Max. (A) : 100n
@V(GS) (V) (Test Condition) : 20
r(DS)on Max. (Ohms) : 90m
@V(GS) (V) (Test Condition) : 10
@I(D) (A) (Test Condition) : 30
g(fs) Min. (S) Trans. conduct. : 9.0
g(fs) Max; (S) Trans. conduct; :
@V(DS) (V) (Test Condition) : 15
@I(D) (A) (Test Condition) : 19
C(iss) Max. (F) : 3.5n
@V(DS) (V) (Test Condition) : 25
@V(GS) (V) (Test Condition) : 0.0
@Freq. (Hz) (Test Condition) : 1.0M
td(on) Max (s) On time delay : 35n
t(r) Max. (s) Rise time : 190n
t(d)off Max. (s) Off time : 170n
t(f) Max. (s) Fall time. : 130n
Package Style : TO-204AE
Mounting Style : T
Description :