Price Of China 4 inch n-doped 4H Silicon Carbide Crystal

FOB Reference Price:Get Latest Price
$300.00 - $450.00 / Pieces | 1 Piece/Pieces (Min. Order)
Lead Time:
Quantity(Pieces) 1 - 100 >100
Est. Time(days) 45 Negotiable
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Overview
Quick Details
Place of Origin:
Zhejiang, China (Mainland)
Brand Name:
SICCAS
Model Number:
sic
Application:
Semiconductor
Size:
2 inch, 3 inch, 4 inch, 6 inch
Grade:
Production, Research and experimental grade.
Supply Ability:
100pcs/month
Packaging Details:
Shipping Boxes(25 wafers per box) or Single Wafer Shippers
Supply Ability
Supply Ability:
100 Piece/Pieces per Month
Packaging & Delivery
Packaging Details
Shipping Boxes(25 wafers per box) or Single Wafer Shippers
Port
shanghai
Lead Time :
Quantity(Pieces) 1 - 100 >100
Est. Time(days) 45 To be negotiated

 4 inch Conductive SiC Wafer Specification

Product

4H-SiC

Grade

Grade I

Grade II

Grade III

polycrystalline areas

None permitted

None permitted

<5%

polytype areas

None permitted

20%

20% ~ 50%

Micropipe Density)

< 5micropipes/cm-2

< 30micropipes/cm-2

<100micropipes/cm-2

Total usable area

>95%

>80%

N/A

Diameter

100.0 mm +0/-0.5 mm

Thickness

500 μm ± 25 μm or Customer Specification

Dopant

n type: nitrogen

Primary Flat Orientation)

Perpendicular  to <11-20> ± 5.0°

Primary Flat Length

32.5 mm ± 2.0 mm

Secondary Flat Orientation)

90° CW from Primary flat ± 5.0°

Secondary Flat Length)

18.0 mm ± 2.0 mm

On axis Wafer Orientation)

{0001} ± 0.25°

Off axis Wafer Orientation

4.0° toward <11-20> ± 0.5° or Customer Specification

TTV/BOW/Warp

< 5μm / <10μm /< 20μm

Resistivity

0.01~0.03 Ω×cm

Surface Finish

C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification

Double side polish

Main products

Application

Company Information

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