13003S Silicon NPN Transistor (TO-126)

Absolute Maximum Ratings (Tc=25^oC)

Parameter

Symbol

Rating Value

Unit

C-E Voltage

V_CEO

400

V

C-B Voltage

V_CBO

600

V

E-B Voltage

V_EBO

9

V

Collected current

I_C

1.3

A

Power Dissipated

Ta=25^oC

P_tot

1.15

W

Tc=25^oC

35

Junction temperature

T_j

150

^oC

Storage temperature

T_stg

-55~150

^oC

Parameter

Symbol

Test condition

Value

Unit

MIN

NOR

MAX

C-B Cut-off current

I_CBO

V_CB=600V , I_E=0

0.1

mA

E-B Cut-off current

I_EBO

V_EB=9V , I_C=0

0.1

mA

DC Current Gain

h_FE^a

V_CE= 5V , I_C=0.25A

10

30

The ratio of L-Current h_FE1 and H-Current h_FE2

h_FE1/h_FE2

h_FE1:V_CE=5V , I_C=5mA

h_FE2:V_CE= 5V ,I_C=0.25A

0.75

0.9

C-E satisfied voltage

V_CEsat^a

I_C=0.25A , I_B=1mA

0.3

V

B-E satisfied voltage

V_BEsat^a

I_C=0.25A , I_B=1mA

1.2

V

Storage time

t_S

I_C=0.25A

1.0

3.0

μs

Character frequency

f_T

V_CE= 10V , I_C=0.1A ,  f=1MHz

5

MHz

a: Pulse test tp≤300s  δ≤2%