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InGaAs Photodiode TO-CAN

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receiver and ONU, triplexer, Gpon,instrument: CATV
Brand Name: SWT
Place of Origin: Beijing China (Mainland)
Model Number: PDS-4X3-
Payment Terms: T/T
Supply Ability: 800000 Piece/Pieces per Year
Package: paper box, ESD protection, with RoHS certification
Delivery Time: 15 days

Supplier Details

Beijing SWT Optical Communication Technology Co., Ltd.

[ Beijing, China (Mainland) ]
  • Business Type:Manufacturer
  • Product/Services:LiNbO3 Phase Modulator,CATV Dual Outputs Analog Modulator,10G Intensity ...
  • Online Showroom: 34 products
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  • Product Details
  • Company Profile
  • receiver and ONU, triplexer, Gpon,instrument: C...
  • Brand Name: SWT
  • Place of Origin: Beijing China (Mainland)
  • Model Number: PDS-4X3-

Planar semiconductor design and dielectric passivity; Low capacitance,small dark current and high responsively; Ball lens cap pa

Planar semiconductor design and dielectric passivity; Low capacitance,small dark current and high responsively; Ball lens cap packaging; Hermetical packaging and 100% purge burn-in

Applications:

Optical power inspection
Laser distance measurement
Fiber optical communication systems
Optical receivers or nodes
Triplexer & Duplexer Modules
Recommended Normal Analog Component:

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Wavelength

λ

 

1000

 

1650

nm

Dark Current

ID

Ee=0, VR =5V

 

0.05

0.5

nA

Responsivity

Re

VR =5V, λ=1310nm

0.85

0.90

 

A/W

Responsivity

Re

VR =5V, λ=1550nm

0.90

0.95

 

A/W

Capacitance

C

Ee=0, VR=5V, f=1MHz, case grounded

 

0.45

0.65

pF

Operating voltage

Vopr

-5

-15

V

Frequency Responsibility

BW

VR=5V,-3dB

2.5

 

 

GHz

 
Suggest High Linearity Component:

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Wavelength

λ

 

1000

 

1650

nm

Dark Current

ID

Ee=0, VR =5V

 

0.05

0.5

nA

Responsivity

Re

VR =5V, λ=1310nm

0.85

0.90

 

A/W

Responsivity

Re

VR =5V, λ=1550nm

0.90

0.95

 

A/W

Capacitance

C

Ee=0, VR=5V, f=1MHz, case grounded

 

0.45

0.65

pF

Second order

IMD2

 

F1=400MHz,P1=-3dBm

f2=450.25MHz,P2=-3dBm;MI=40%.Pavg=0dBm.Rload=50Ω

 

 

-70

dBc

Third order

IMD3

 

 

-80

dBc

Operating voltage

Vopr

-5

-15

V

Frequency Responsibility

BW

VR=5V,-3dB

2.5

 

 

GHz

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Planar semiconductor design and dielectric passivation, 3-pin coaxial streamline packaging
InGaAs Photodiode TO-CAN
Planar semiconductor design and dielectric passivity; Low capacitance,small dark current and high responsively; Ball lens cap pa
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Planar semiconductor design and dielectric passivity; Low capacitance,small dark current and high responsively; Ball lens cap pa
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Superior noise and photoelectric performance. Hermetical packaging and 100% purge burn-in.
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Superior noise and photoelectric performance. Hermetical packaging and 100% purge burn-in.
Normal Analog TO-CAN
Planar semiconductor design and dielectric passivation.3-pin coaxial streamline packaging.
Photodiode (Mini Package)
Planar semiconductor design and dielectric passivation 2-pin coaxial mini packaging ,SM pigtail without connector

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