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Electronic Component Transistor 13003

brand: HC
model: 13003 antistatic semiconductors
material: Si
polarity: NPN
package type: TO-126
Brand Name: HC
Type: Bipolar Junction Transistor
Place of Origin: China (Mainland)
Minimum Order Quantity: 5000 Piece/Pieces
Supply Ability: 500000 Piece/Pieces per Month
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Supplier Details

Weifang Huichuan Electric Co., Ltd.

[ Shandong, China (Mainland) ]
Gold Supplier [ 1st Year] Verified Supplier
  • Business Type:Manufacturer
  • Product/Services:LF large power transistor,LF high voltage power transistor,YZ power ...
  • Online Showroom: 101 products
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  • Product Details
  • Company Profile
  • brand: HC
  • model: 13003 antistatic semiconductors
  • material: Si
  • polarity: NPN
  • package type: TO-126
  • Brand Name: HC
  • Type: Bipolar Junction Transistor
  • Place of Origin: China (Mainland)
  • Model Number: 13003
  • Package Type: Throught Hole

1)High Voltage Capability; 2)High Speed Switching; 3) Wide SOA ; 4)ROHS Compliant 5)Electronic Component transistor

Our products are widely used in communications, electronics, household appliances, automobile electronics, industrial automation instruments, testing equipment lightings, electrical appliances (energy-saving lamps, electronic ballasts, and solar lights), electric tools and other related fields.Material: Germanium, silicon, gallium arsenide Physical Packing: metal, through hole plastic, ball grid array, power modules,Electronic Component transistor

BRAND :HC                                  MODEL :13003 antistatic semiconductors

Package type(model) : TO- 126       Package material :  plastic package       

frame :  plane                                Material :  si                            

polarity : NPN                                Frequency :   low                         

power:   small                     

ICBO

VCB=700V, IE=0

 

 

0.1

mA

ICEO

VCE=400V, IB=B                 0

 

 

0.1

mA

IEBO

VEB=9V, IC=0

 

 

0.1

mA

VCBO

IC=0.1mA

700

 

 

V

VCEO

IC=1mA

400

 

 

V

VEBO

IE=0.1mA

9

 

 

V

hFE

VCE=5V, IC=0.25A

15

       

30

 

hFE1/

hFE2

hFE1:VCE=5V, IC=5mA

hFE2: VCE=5V, IC=0.5A

 

0.75

 

0.9

       

 

VCE sata

IC=1A, IB=B                 0.25A

 

0.3

0.8

V

VBE sata

IC=1A, IB=B                 0.25A

 

0.9

1.2

V

ts

 

UI9600,IC=0.25A

2

 

4.5

μs

tr

 

 

1

μs

tf

 

 

2

μs

 

fT

VCE=10V, IC=0.1A

f=1MHz

 

5

 

 

 

MHz

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1)High Voltage Capability; 2)High Speed Switching; 3) Wide SOA ; 4)ROHS Compliant 5)Transistor
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