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sdram module / ddr memory ram / dram memory

Brand Name: OEM
Application: Desktop Computer,laptop computer
Memory Capacity: 128MB/256MB/512MB/1G/2G
Place of Origin: Guangdong China (Mainland)
Frequency: 133,333,400,667,800,1066,1333
Transmission Type: DDR1,DDR2,DDR3
Payment Terms: T/T,Western Union,MoneyGram
Minimum Order Quantity: 500 Piece/Pieces
Delivery Time: 5-7 work days
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Supplier Details

HongKong Haokey Tech Co., Ltd.

[ Hong Kong ]
Gold Supplier [ 1st Year] Verified Supplier
  • Business Type:Manufacturer
  • Product/Services:HDD player,HDD media player,ddr2 ram,ram memory,hdd multimedia ...
  • Online Showroom: 1,320 products
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  • Product Details
  • Company Profile
  • Brand Name: OEM
  • Application: Desktop Computer,laptop computer
  • Memory Capacity: 128MB/256MB/512MB/1G/2G
  • Place of Origin: Guangdong China (Mainland)
  • Frequency: 133,333,400,667,800,1066,1333
  • Transmission Type: DDR1,DDR2,DDR3

sdram module / ddr memory ram / dram memory
DDR1,DDR2,DDR3
Desktop Computer,laptop computer
128MB/256MB/512MB/1G/2G

sdram module / ddr memory ram / dram memory

DDR1,DDR2,DDR3   
Desktop Computer,laptop computer.   
128MB/256MB/512MB/1G/2G

DDR1,DDR2,DDR3  
Desktop Computer,laptop computer  
128MB/256MB/512MB/1G/2G.
1) DDR 400/333 & DDRII 533/667/800 MHz
2) 168/184/240-pin socket type dual in line memory module (DIMM)
3) 2.6V power supply
4) Data rate: 400/333/533/667/800Mbps (max. )
5) 2.5 V (SSTL-2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II products
6) Double-data-rate architecture, two data transfers per clock cycle
7) Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
8) Data inputs and outputs are synchronized with DQS
9) DQS is edge aligned with data for read, center aligned with data for write
10) Differential clock inputs (CK and CK)
11) DLL aligns DQ and DQS transitions with CK transitions
12) Commands entered on each positive CK edge: Data and data mask referenced to both edges of DQS
13) Four internal banks for concurrent operation (component)
14) Data mask(DM) for write data
15) Auto precharge option for each burst access
16) Programmable burst length: 2, 4, 8
17) Programmable/CAS latency (CL): 3
18) Programmable output driver strength: Normal/weak
19) Refresh cycles: (8192 refresh cycles/64ms)
20) 7.8US maximum average periodic refresh interval
21) Posted CAS by programmable additive latency for better command and data bus efficiency
22) Off-chip-driver impedance adjustment and on-die-termination for better signal quality
23) DQS can be disabled for single-ended data strobe operation
24) 2 variations of refresh
25) Auto refresh
26) Self refresh

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