| FOB Price: | Get Latest Price |
|---|---|
| Port: | Taiwan |
| Minimum Order Quantity: | 10 Piece/Pieces |
| Supply Ability: | MASS STOCK , INSTANT SERVICE |
| Payment Terms: | T/T,Western Union |
| Brand Name: | MITSUBISHI | Model Number: | RA30H1317M | Type: | Module |
| Application: | Mobile Phone | Operating Temperature: | -30°C to +110°C | Broadband Frequency Range: | 135-175MHz |
| Module Size: | 66 x 21 x 9.88mm |
| Packaging Detail: | STANDARD PACKAGING FOR EXPORT |
| Delivery Detail: | STOCK OR LEAD TIME |
1. MITSUBISHI RF MOSFET Power Module
2. Frequency Range: 135-175MHz
3. Output Power: 30W
4. Module Size: 66 x 21 x 9.88 mm
Silicon RF Power Semiconductors
High Frequency Devices
RF MOSFET Power Module
High Output Power Si MOSFET Module
VHF 50-300MHz / High Power
1. DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG = 0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG = 5V, the typical gate current is 1mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
2. FEATURES
1 | Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V) |
2 | Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW |
3 | Broadband Frequency Range: 135-175MHz |
4 | Low-Power Control Current IGG=1mA (typ) at VGG = 5V |
5 | Module Size: 66 x 21 x 9.88 mm |
6 | Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power |
3. BLOCK DIAGRAM
4. SPECIFICATIONS
Brand Name | MITSUBISHI |
Mounting Type | Through Hole / DIP(Dual in -line package) |
Package Outline | H2S |
Lead Count | 5 |
Lead-Free Type | |
RoHS Compliant | |
Packing | Antistatic tray , 10 modules / tray |
Compatible with many other wireless communication products | |
Mass stock on-hand merchandise supply | |
We supply various electronic components and welcome your inquiries | |
5. OUTLINE DRAWING (Unit: mm)
6. OUR ADVANTAGE
• FAVORABLE PRICE |
• A MULTIPLICITY OF SOURCES |
• MASS STOCK FOR INSTANT DELIVERY |
• ISO 9001:2008 CERTIFICATED |
• COUTOMER-ORIENTED |
7. OTHERS SERIES PRODUCTS
| Product/Service (We Sell): | Microcontrollers,Semiconductors,IC( Integrated Circuits ),Transistors,RF Modules | |
| Number of Employees: | 11 - 50 People |
| Total Annual Sales Volume: | US$10 Million - US$50 Million | |
| Export Percentage: | 41% - 50% |
| Management Certification: | ISO 9001:2008 D&B D-U-N-S Registered Certificate |
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