Detailed Product Description

Non-Volatile SRAM Module 16Kbit (2K x 8-Bit), DIP Package, 24pin, 5V Design 
 
 ☞  General Discription. 
        The HMN28D are 16,384-bit, fully static, nonvolatile SRAM’s organized as 2,048 words by 8 bits. Each NVSRAM has a self-contained lithium energy source and control circuitry, which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and writes protection is unconditionally enabled to prevent data corruption. The HMN28D devices can be used in place of existing 2K x 8 SRAM’s directly conforming to the popular byte wide 24-pin DIP standard. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing. The HMN28D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.