Mounting Type
Through Holes
Description
Low on-Resistance, 100% Avalanche Test, Good Stability and Uniformity with High EAS, Special Process Technology for high ESD Capability
Place of Origin
Zhejiang, China
Operating Temperature
-55℃~+150℃
Application
High Voltage Power Supplies
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Brand
AKT3N100FC 1000V 3A N-Channel Power MOSFET
Current - Collector (Ic) (Max)
3A(TC=25℃), 1.8A(TC=100℃)
Voltage - Collector Emitter Breakdown (Max)
1000V
Current - Collector Cutoff (Max)
12A
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
1000V
Current - Continuous Drain (Id) @ 25°C
3A
Rds On (Max) @ Id, Vgs
3.4 Ohm
Gate Charge (Qg) (Max) @ Vgs
22nC
Input Capacitance (Ciss) (Max) @ Vds
1100pF
Drive Voltage (Max Rds On, Min Rds On)
3-5V
Voltage - Breakdown (V(BR)GSS)
1000V
Current - Drain (Idss) @ Vds (Vgs=0)
10uA
Current Drain (Id) - Max
3A
Resistance - RDS(On)
3.0 Ohm
Voltage - Offset (Vt)
±30V
Applications
Capacitor Discharge Applications
Transistor Type
MOSFET transistor, N-Channel, Enhancement Mode
Drain Current(TC=100℃)
1.8A
Single Pulse Avalanche Energy
460mJ
Maximum Power Dissipation(TC=25℃)
42W
Application 1
High Voltage Power Supplies
Application 2
Capacitor Discharge Applications