Mounting Type
Through Hole
Description
Low on-Resistance, Special Process Technology for high ESD Capability, 100% Avalanche Test, Good Stability and Uniformity with High EAS
Place of Origin
Zhejiang, China
Operating Temperature
-55℃~+150℃
Application
DC-DC Converters and AC-DC Power Supply
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Brand
AKT10N65T 650V 10A N-Channel Power MOSFET
Current - Collector (Ic) (Max)
10A(TC=25℃), 6.5A(TC=100℃)
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector Cutoff (Max)
38A
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
10A
Rds On (Max) @ Id, Vgs
0.9 Ohm
Gate Charge (Qg) (Max) @ Vgs
25nC
Input Capacitance (Ciss) (Max) @ Vds
1200pF
Drive Voltage (Max Rds On, Min Rds On)
2.0-4.0V
Voltage - Breakdown (V(BR)GSS)
650V
Current - Drain (Idss) @ Vds (Vgs=0)
1uA
Current Drain (Id) - Max
10A
Resistance - RDS(On)
0.85 Ohm
Voltage - Offset (Vt)
±30V
Current - Valley (Iv)
6.5A
Applications
DC-DC Converters and AC-DC Power Supply
Transistor Type
MOSFET transistor, N-Channel, Enhancement Mode
Drain Current(TC=100℃)
6.5A
Single Pulse Avalanche Energy
490mJ
Maximum Power Dissipation(TC=25℃)
156W
Application 1
UPS Applications
Application 2
DC-DC Converters and AC-DC Power Supply