Mounting Type
through holes, screw fixation
Description
Low VCE(sat) Trench IGBT technology, 10us short circuit capability, VCE(sat) with positive temperature coefficient, Maximum junction temperature 175℃, Low inductance case, Isolated heatsink using DBC technology
Model Number
AKM50B120RE2E7
Place of Origin
Zhejiang, China
Current
50A@TC=100℃, 100A@TC=25℃
Configuration
6 IGBT transistors, 6 diodes, Sixpack Module
Collector Current (TC=100℃)
50A
ICM (tp limited by Tvj max)
100A
Maximum Operating Junction Temperature
175°C
Maximum Power Dissipation @ TC = 25°C
307W
Turn Off Switching Loss per Pulse
4.42mJ