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      12A 600V MOSFET N-Channel Enhancement Mode Power MOSFET Transistor TO-220 Package RDS (on) 0.50 Ohm For UPS Applications

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      Aiko Electronics Technology Co., Ltd.1 yrCN

      Key attributes

      Industry-specific attributes

      Model Number
      AKQP12N60
      Type
      MOSFET 
      Brand Name
      AIKO
      Package Type
      Through Hole

      Other attributes

      Mounting Type
      Through Hole
      Description
      Low on-Resistance, Special Process Technology for high ESD Capability, 100% Avalanche Test, Good Stability and Uniformity with High EAS
      Place of Origin
      Zhejiang, China
      Package / Case
      TO-220
      Type
      MOSFET transistor
      Operating Temperature
      -55℃~+150℃
      Series
      MOSFET
      Application
      DC-DC Converters and AC-DC Power Supply
      Supplier Type
      Original manufacturer, ODM
      Media Available
      datasheet, Photo
      Brand
      AKQP12N60 600V 12A N-Channel Power MOSFET
      Current - Collector (Ic) (Max)
      12A(TC=25℃), 7.5A(TC=100℃)
      Voltage - Collector Emitter Breakdown (Max)
      600V
      Current - Collector Cutoff (Max)
      48A
      Power - Max
      225W
      Operating Temperature
      -55°C ~ 150°C
      Mounting Type
      Through Hole
      Drain to Source Voltage (Vdss)
      600V
      Current - Continuous Drain (Id) @ 25°C
      12A
      Rds On (Max) @ Id, Vgs
      0.8 Ohm
      Vgs(th) (Max) @ Id
      4.0V
      Gate Charge (Qg) (Max) @ Vgs
      43nC
      Input Capacitance (Ciss) (Max) @ Vds
      1490pF
      Current Rating (Amps)
      12A
      Voltage - Rated
      600V
      Drive Voltage (Max Rds On, Min Rds On)
      2.0-4.0V
      Vgs (Max)
      630V
      Configuration
      Single
      Voltage - Breakdown (V(BR)GSS)
      600V
      Current - Drain (Idss) @ Vds (Vgs=0)
      1uA
      Current Drain (Id) - Max
      10A
      Voltage - Cutoff (VGS off) @ Id
      12V
      Resistance - RDS(On)
      0.8 Ohm
      Voltage
      600V
      Voltage - Offset (Vt)
      ±30V
      Current - Valley (Iv)
      7.5A
      Current - Peak
      12A
      Applications
      DC-DC Converters and AC-DC Power Supply
      Transistor Type
      MOSFET transistor, N-Channel, Enhancement Mode
      VDSS
      600V
      VGSS
      ±30V
      Drain Current(TC=25℃)
      12A
      Drain Current(TC=100℃)
      7.5A
      Single Pulse Avalanche Energy
      210mJ
      Maximum Power Dissipation(TC=25℃)
      225W
      Turn-off Delay Time
      135ns
      Total Gate Charge
      43nC
      Application 1
      UPS Applications
      Application 2
      DC-DC Converters and AC-DC Power Supply

      Packaging and delivery

      Selling Units:
      Single item
      Single package size:
      1X3X5 cm
      Single gross weight:
      0.006 kg
      Show more

      Lead time

      Quantity (pieces)1 - 5000050001 - 100000000 > 100000000
      Lead time (days)2030To be negotiated
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 10 piece
      Sample price:
      $1.00/piece

      Customization

      Customized logo
      Min. order: 100000
      Customized packaging
      Min. order: 100000
      Graphic customization
      Min. order: 100000
      For more customization details, message supplier

      Product descriptions from the supplier

      50000 - 99999999 pieces
      $0.20
      >= 100000000 pieces
      $0.05

      Variations

      Total options:
      Select now

      Shipping

      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 10 piece
      Sample price:
      $1.00/piece

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