2-6 inch Undoped GaN Sapphire Wafer for Power Device

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Shanghai Ganova Electronic Information Co., Ltd.2 yrs

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Key attributes

Other attributes

Place of Origin

China

Brand Name

GaNova

Model Number

0010001

Type

GaN Wafer

Product name

2 -6 inch Undoped GaN/Sapphire Wafer

Dimensions

50.8±0.2 mm (2in)/100±0.2 mm(4in)/150 +0.2 mm (6in)

Thickness

430+25 um (2in)/660+25 um(4in)/1300 +25 um (6in)

Orientation

C plane (0001)off angle toward M-axis 0.2 + 0.1°

Structure

4.5 um uGaN/~ 25 nm uGaN buffer/ Sapphire

Conduction Type

N-type

Roughness (Ra)

<0.5 nm

Resistivity(300K)

<0.5 Ω.cm

Package

Packaged in a cleanroom in single wafer container

Packaging and delivery

Selling Units:

Single item

Single package size:

30X20X20 cm

Single gross weight:

0.010 kg

Lead time

Quantity (pieces)	1 - 1	2 - 15	> 15
Lead time (days)	15	50	To be negotiated

Customization

Polish

Min. order: 25

For more customization details, message supplier

Product descriptions from the supplier

Minimum order quantity: 1 piece

$89.00 - $295.00

Variations

Total options:

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