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2 inch N-type SSP Si-doped GaN on Sapphire Epi-wafer semiconductor for LED
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Key attributes
Other attributes
Place of Origin
China
Brand Name
GaNova
Model Number
JDWY03-001-019
Type
GaN Wafer
Item
GaN-T-C-N-C50
Dimensions
50.8 ± 0.2 mm
Thickness/Thickness STD
4.5 ± 0.5 μm / < 3%
Orientation
(1-100) 0 ± 0.2 °, 16 ± 1 mm
Conduction Type
N-type
*XRD FWHMs
(0002) < 300 arcsec,(10-12) < 400 arcsec
Orientation of Sapphire
C plane (0001) off angle toward M-axis 0.2 ± 0.1 °
Orientation Flat of Sapphire
(11-20) 0 ± 0.2 °, 16 ± 1 mm
Sapphire Polish
Single side polished (SSP) / Double side polished (DSP)
Useable Area
> 90% (edge and macro defects exclusion)
Packaging and delivery
Packaging Details
carton
Port
Shanghai
Supply Ability
Supply Ability
100000 Piece/Pieces per Month
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Product descriptions from the supplier
5 - 24 pieces
$108.00
>= 25 pieces
$103.00
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