Mounting Type
through holes
Description
Low Intrinsic Capacitances, Excellent Switching Characteristics, Extended Safe Operating Area, Unrivalled Gate Charge, 100% Avalanche Tested
Place of Origin
Zhejiang, China
Operating Temperature
-55℃~+150℃
Application
high efficient DC to DC converters
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Brand
AKT200N08T 80V 200A N-Channel Power MOSFET
Current - Collector (Ic) (Max)
200A(TC=25℃), 126A(TC=100℃)
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector Cutoff (Max)
200A
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
200A
Rds On (Max) @ Id, Vgs
7.0 Ohm
Gate Charge (Qg) (Max) @ Vgs
105nC
Input Capacitance (Ciss) (Max) @ Vds
8500pF
Current Rating (Amps)
200A
Drive Voltage (Max Rds On, Min Rds On)
2.0V
Vce(on) (Max) @ Vge, Ic
10V
Input Capacitance (Cies) @ Vce
8500pF
Voltage - Breakdown (V(BR)GSS)
80V
Current - Drain (Idss) @ Vds (Vgs=0)
10uA
Current Drain (Id) - Max
200A
Voltage - Cutoff (VGS off) @ Id
30V
Resistance - RDS(On)
3.1 milliOhm
Voltage - Offset (Vt)
±25V
Current - Valley (Iv)
126A
Applications
Motor Control and Synchronous Rectification
Transistor Type
MOSFET transistor, N-Channel, Enhancement Mode
Drain Current(TC=25℃)
200A
Drain Current(TC=100℃)
126A
Single Pulse Avalanche Energy
1082mJ
Maximum Power Dissipation(TC=25℃)
625W
Application 1
Switched Mode Power Supplies
Application 2
Synchronous Rectification