4 inch GaN-on-Silicon HEMT Epi-wafer semiconductor material for Power device

Name: 4 Inch Gan-on-silicon Hemt Epi-wafer Semiconductor Material For Power Device - Buy Gan-on-silicon,Hemt Epi-wafer,Semiconductor Material Product on Alibaba.com
Brand: Ali
SKU: 1600681896810

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Shanghai Ganova Electronic Information Co., Ltd.2 yrs

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Key attributes

Other attributes

Place of Origin

China

Brand Name

GaNova

Model Number

2JDWY03-002-002

Type

GaN Wafer

Dimensions

2 inch/4 inch/6inch

Resistivity(300K)

<350 Ω/

Electron Concentration

>9.0E12 cm-²

Mobility

> 1800 cm2/(V.S)

Substrate Structure

Packaged in a class 100 clean room environment

Packaging and delivery

Packaging Details

carton

Supply Ability

100000 Piece/Pieces per Month

Product descriptions from the supplier

>= 5 pieces

$218.86

Variations

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