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40T60 IGBT Transistor Single 80A 600V 303W DIP IHW40T60 CRG40T60AN3H IHW40T60FKSA1
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Dongguan Mixin Micro Semiconductor Co., Ltd.
Custom manufacturer
4 yrs
CN
Key attributes
Industry-specific attributes
Model Number
40T60
Type
IGBT Transistor
Brand Name
Original
Package Type
Through Hole
Other attributes
Mounting Type
Through Hole
Description
IHW40T60FKSA1
Place of Origin
China
Package / Case
PG-TO247-3-1
Type
Transistor
Operating Temperature
-40°C ~ 175°C (TJ)
Series
IHW40T60FKSA1 Transistor
D/C
New
Application
IGBT Transistor
Brand
40T60
Current - Collector (Ic) (Max)
80A
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector Cutoff (Max)
120A
Power - Max
303W
Frequency - Transition
920uJ
Operating Temperature
-40℃ ~ 175℃ (TJ)
Mounting Type
Through Hole
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 40A
Input
Standard
Switching Energy
920uJ
Gate Charge
215 nC
Reverse Recovery Time (trr)
143 ns
Test Condition
400V, 40A, 5.6Ohm, 15V
Supply Ability
Supply Ability
10000 Piece/Pieces per Week
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Lead time
Quantity (pieces)
1 - 10000
> 10000
Lead time (days)
3
To be negotiated
Customization
PCBA
Min. order: 1
SMT
Min. order: 1
PCB
Min. order: 1
BOM
Min. order: 1
For more customization details,
message supplier
Product descriptions from the supplier
>= 1 pieces
$0.10
Variations
Total options:
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