4N60 N-channel 650V 4.5A TO-220 Power MOSFET original smd Transistor hualichip smd ic mos 4N60

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Shenzhen Hualixin Electronic Technology Co., Ltd.3 yrs

High-Quality 4N60 N-Channel 650V 4.5A TO-220 Power MOSFET: Our product is an original smd Transistor manufactured by Hualichip, known for its reliability and durability. It is designed for power supply applications, including MOS, MOSFET, IGBT, etc., making it a versatile component for a variety of electronic devices.
Supplier Type Agency and Original Manufacturer: We source our 4N60 N-Channel 650V 4.5A TO-220 Power MOSFETs directly from the original manufacturer, ensuring that you receive genuine and high-quality products.
Surface Mount and SMD Configuration: The 4N60 N-Channel 650V 4.5A TO-220 Power MOSFET is designed for surface mount and smd applications, providing a compact and efficient solution for your electronic devices.
Wide Range of Applications: Our 4N60 N-Channel 650V 4.5A TO-220 Power MOSFET can be used in a variety of applications, including power supply, mos, mosfet, and IGBT, making it a versatile component for your electronic devices.
High Voltage and Current Rating: The 4N60 N-Channel 650V 4.5A TO-220 Power MOSFET is capable of handling high voltage and current, making it ideal for use in power-intensive applications.

Key attributes

Industry-specific attributes

Model Number

4N60

Type

MOSFET

Brand Name

4N60

Package Type

Surface Mount

Other attributes

Place of Origin

China,TaiWan

Package / Case

TO-220

D/C

22+

Application

POWER

Supplier Type

Original manufacturer, Agency

Cross Reference

4N60

Media Available

datasheet, Photo

Brand

MOSFET

Current - Collector (Ic) (Max)

standard

Voltage - Collector Emitter Breakdown (Max)

standard

Vce Saturation (Max) @ Ib, Ic

standard

Current - Collector Cutoff (Max)

standard

DC Current Gain (hFE) (Min) @ Ic, Vce

standard

Power - Max

standard

Frequency - Transition

standard

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Resistor - Base (R1)

standard

Resistor - Emitter Base (R2)

standard

FET Type

N-channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

standard

Vgs(th) (Max) @ Id

standard

Gate Charge (Qg) (Max) @ Vgs

standard

Input Capacitance (Ciss) (Max) @ Vds

standard

Frequency

standard

Current Rating (Amps)

standard

Noise Figure

standard

Power - Output

standard

Voltage - Rated

standard

Drive Voltage (Max Rds On, Min Rds On)

standard

Vgs (Max)

standard

IGBT Type

standard

Configuration

Single

Vce(on) (Max) @ Vge, Ic

standard

Input Capacitance (Cies) @ Vce

standard

Input

standard

NTC Thermistor

standard

Voltage - Breakdown (V(BR)GSS)

standard

Current - Drain (Idss) @ Vds (Vgs=0)

standard

Current Drain (Id) - Max

standard

Voltage - Cutoff (VGS off) @ Id

standard

Resistance - RDS(On)

standard

Voltage

standard

Voltage - Output

standard

Voltage - Offset (Vt)

standard

Current - Gate to Anode Leakage (Igao)

standard

Current - Valley (Iv)

standard

Current - Peak

standard

Applications

power supply

Part Number

4N60

Packaging

Tube-packed

Description

TO-220 MOSFET

Attribute

RoHS

Availability

In Stock

new Original

Packaging and delivery

Port

shenzhen

Selling Units:

Single item

Single package size:

37X21X10 cm

Single gross weight:

0.079 kg

Lead time

Still deciding? Get samples first! Order sample

Samples

Maximum order quantity: 10 pair

Sample price:

$2.00/pair

Product descriptions from the supplier

1 - 9 pairs

$0.22

10 - 49 pairs

$0.21

50 - 999 pairs

$0.20

>= 1000 pairs

$0.18

Variations

Total options:

Select now

Shipping

Shipping solutions for the selected quantity are currently unavailable

Still deciding? Get samples first! Order sample

Samples

Maximum order quantity: 10 pair

Sample price:

$2.00/pair

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Quantity (pairs)	1 - 5	> 5
Lead time (days)	5	To be negotiated