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      6 inch N-Type P-MOS/P-SBD/D Grade 4H-SiC substrate for power and microwave devices

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      Shanghai Ganova Electronic Information Co., Ltd.2 yrsCN
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      Key attributes

      Other attributes

      Place of Origin
      China
      Brand Name
      GaNova
      Model Number
      JDCD03-002-007
      Type
      GaN Wafer
      Polytype
      None Permitted
      Hexagon surface hybrid crystal
      Not allow
      Hexagonal Polycrystal
      None Permitted
      Diameter
      150.0 mm +0mm/-0.2mm
      Primary Flat Length
      47.5 mm ± 1.5 mm

      Packaging and delivery

      Packaging Details
      carton

      Supply Ability

      Supply Ability
      100000 Piece/Pieces per Month
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      Product descriptions from the supplier

      5 - 24 pieces
      $570.76
      >= 25 pieces
      $543.59

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