60T65 IGBT Transistor Single DIP 60T65PES MBQ60T65PES FGH60T65SQD-F155

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Dongguan Mixin Micro Semiconductor Co., Ltd.4 yrs

CN

Key attributes

Industry-specific attributes

Model Number

60T65

Type

IGBT Transistor

Brand Name

Original

Package Type

DIP

Other attributes

Mounting Type

Through Hole

Description

IGBT Transistor Single DIP

Place of Origin

China

Package / Case

TO-247-3

D/C

New

Application

IGBT Transistor

Cross Reference

MBQ60T65PES, FGY160T65SPD-F085, FGH60T65SQD-F155, FGH60T65SHD-F155, AFGY160T65SPD-B4

Brand

FGH60T65SQD-F155

Current - Collector (Ic) (Max)

120A

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector Cutoff (Max)

240A

Power - Max

333W

Frequency - Transition

227uJ (on)

Operating Temperature

-55℃ ~ 175℃ (TJ)

Mounting Type

Through Hole

IGBT Type

Trench Field Stop

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 60A

Input

Standard

Switching Energy

227uJ (on), 100uJ (off)

Gate Charge

79 nC

Td (on/off) @ 25℃

20.8ns/102ns

Test Condition

400V, 15A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

34.6 ns

Lead time

Product descriptions from the supplier

>= 1 pieces

$7.10

Variations

Total options:

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