Description
850nm 1W Infrared Laser Diode TO18-5.6mm 850 IR 1000mw High Power Laser Diode
Place of Origin
Guangdong, China (Mainland)
Operating Temperature
25degree
Application
Infrared night vision instrument
Media Available
datasheet, Photo
Max. Reverse Current
Standard
Voltage - Peak Reverse (Max)
N/A
Current - Average Rectified (Io)
N/A
Voltage - Forward (Vf) (Max) @ If
N/A
Current - Reverse Leakage @ Vr
N/A
Operating Temperature
-10~+40 Degree
Voltage - DC Reverse (Vr) (Max)
N/A
Current - Average Rectified (Io) (per Diode)
N/A
Reverse Recovery Time (trr)
N/A
Power Dissipation (Max)
N/A
Capacitance Ratio Condition
N/A
Voltage - Zener (Nom) (Vz)
N/A
Storage Temperature
-40~+80 Degree