Place of Origin
Guangdong, China
Current - Collector (Ic) (Max)
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Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
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Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
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Resistor - Emitter Base (R2)
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
-
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
56 A
Rds On - Drain-Source Resistance
7.5 mOhms
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage
900 mV
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2.7 W