Place of Origin
Guangdong, China
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
--
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Resistor - Emitter Base (R2)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
--
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Breakover Current IBO Max
200 A
Rated Repetitive Off-State Voltage VDRM
600 V
Off-State Leakage Current @ VDRM IDRM
5 uA
Vf - Forward Voltage
500 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Voltage - Vgt
1.3 V
Gate Trigger Current - Igt
25 mA
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 125 C
