ESD3V3D5B SOD523 3.3V ESD Bi-directional tvs diode protect 3000Pcs/ Reel System-level protection electrostatic discharge

  • 1-2999 Pieces
    $0.20
  • 3000-4999999 Pieces
    $0.15
  • >=5000000 Pieces
    $0.10
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Overview
Quick Details
Model Number:
ESD3V3D5B
Brand Name:
YINT
Place of Origin:
Shanghai, China (Mainland)
Type:
ESD3V3D5B
Package:
SOD523
Packing:
3000Pcs/ Reel
Operating voltage:
3.3V
Air discharge:
±15kV

Packaging & Delivery

Selling Units:
Single item
Single package size: 
1X1X1 cm
Single gross weight:
0.100 kg
Package Type:
envalope for small quantity, carton for large quantity
Lead Time :
Quantity(Pieces) 1 - 3000 3001 - 5000000 >5000000
Est. Time(days) 7 21 To be negotiated

     

         ESD3V3D5B is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium.

   

100 Watts Peak Pulse Power per Line (tp=8/20µs)  

Operating voltage: 3.3V

Low leakage current

Package: SOD-523

Low clamping voltage

Complies with following standards:

  – IEC 61000-4-2 (ESD) immunity test

 Air discharge: ±15kV

 Contact discharge: ±8kV

      – IEC61000-4-4 (EFT) 40A (5/50ηs)

Applications

 

 

Cell Phone Handsets and Accessories

Microprocessor based equipment

Personal Digital Assistants (PDA's)

Notebooks, Desktops, and Servers

Portable Instrumentation

Peripherals

Pagers

  

  Absolute Maximum Ratings

  

Parameter

Symbol

Value

Unit

Peak Pulse Power (8/20µs)

PPP

100

Watts

ESD per IEC 61000−4−2 (Air)

VESD

±15

KV

ESD per IEC 61000−4−2 (Contact)

±8

KV

Lead Soldering Temperature

TL

260 (10 sec)

°C

Operating Temperature Range

TJ

-55 to +125

°C

Storage Temperature Range

TSTJ

-55 to +150

°C

 
 
 
 
 

 Electrical Characteristics (T =25°C)

 

Electrical C

haracteristi

 

 

 

Parameter

 

Symbol

 

Conditions

 

Min.

 

Typ.

 

Max.

 

Units

Reverse Stand-off Voltage

VRWM

 

 

 

3.3

V

Reverse Breakdown Voltage

VBR

It  = 1mA

4

 

 

V

Reverse Leakage Current

IR

VR  =VRWM

 

 

1

μA

Clamping Voltage

VC

IPP=1A,    tP = 8/20μs

 

 

7

V

Clamping Voltage

VC

IPP=8A,    tP = 8/20μs

 

 

12

V

Junction Capacitance

CJ

VR=0V, f = 1MHz

 

 

10

pF

 

s (T =25°C

 

 

 

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