Mounting Type
Surface Mount
Description
transistor for ultrasonic
Place of Origin
Guangdong, China
Type
high power transistor for
Operating Temperature
-55°C ~ 150°C(TJ)
Supplier Type
Original manufacturer, ODM, Agency
Media Available
datasheet, Photo, EDA/CAD Models
Current - Collector (Ic) (Max)
5.9A
Voltage - Collector Emitter Breakdown (Max)
20V
Vce Saturation (Max) @ Ib, Ic
1.5 V
Current - Collector Cutoff (Max)
0.7 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
15
Frequency - Transition
3 MHz
Mounting Type
Through Hole
Resistor - Emitter Base (R2)
-
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
5.9A(Ta)
Rds On (Max) @ Id, Vgs
29 ohm @ 5A,4.5V
Vgs(th) (Max) @ Id
1.4V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
1.4V @ 250uA
Input Capacitance (Ciss) (Max) @ Vds
6.7 nC @ 4.5 V
Current Rating (Amps)
5.9 A
Drive Voltage (Max Rds On, Min Rds On)
2V,4.5V
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
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