Description
1.5A 250V Three Phase Power Mosfet Transistor IGBT
Place of Origin
Guangdong, China
Operating Temperature
-40-125C
Supplier Type
Original manufacturer
Media Available
datasheet, Photo
Brand
Mosfet Transistor IGBT Driver
Voltage - Collector Emitter Breakdown (Max)
250V
Current - Collector Cutoff (Max)
1.5A
Operating Temperature
-40-125C
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
1.5A
Rds On (Max) @ Id, Vgs
250V
Gate Charge (Qg) (Max) @ Vgs
1.5A
Current Rating (Amps)
1.5A
Drive Voltage (Max Rds On, Min Rds On)
250V
Vce(on) (Max) @ Vge, Ic
1.5A
Voltage - Breakdown (V(BR)GSS)
250V
Current - Drain (Idss) @ Vds (Vgs=0)
1.5A
Current Drain (Id) - Max
1.5A
Voltage - Offset (Vt)
250V
Current - Gate to Anode Leakage (Igao)
1.5A
Current - Valley (Iv)
1.5A
Applications
Motor Control