Description
Bipolar Transistor NPN 32V 1A 500mW
Place of Origin
Guangdong, China
Application
General Purpose
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
32V
Vce Saturation (Max) @ Ib, Ic
400mV@500mA,50mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
250@100mA,1V
Frequency - Transition
150MHz
Operating Temperature
+150℃@(Tj)
Mounting Type
Surface Mount
Payment
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