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      High Quality 5.0 *10.0 mm2 Un-doped A-plane semiconductor Freestanding GaN wafer for Power Device

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      Shanghai Ganova Electronic Information Co., Ltd.2 yrsCN
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      Key attributes

      Other attributes

      Place of Origin
      China
      Brand Name
      GaNova
      Model Number
      JDCD01-001-004
      Type
      GaN Wafer
      Item
      GaN-FS-A-U-S GaN-FS-A-N-S GaN-FS-A-SI-S
      Dimensions
      5 x 10 mm²
      Thickness
      350 ±25 μm
      Conduction Type
      N-type N-type Semi-Insulating
      TTV
      ≤ 10 μm
      BOW
      - 10 μm ≤ BOW ≤ 10 μm
      Dislocation Density
      From 1 x 10^5 to 3 x 10^6cm-²
      Macro Defect Density
      0 cm-²
      Useable Area
      > 90% (edge exclusion)

      Packaging and delivery

      Packaging Details
      carton
      Port
      Shanghai

      Supply Ability

      Supply Ability
      100000 Piece/Pieces per Month
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      Product descriptions from the supplier

      3 - 14 pieces
      $376.00
      >= 15 pieces
      $368.00

      Variations

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