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High quality G60N100 IGBT 1000V 60A 180W TO264 FGL60N100BNTD G60N100BNTD

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EC Mart Trading (Shenzhen) Limited7 yrsCN
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Key attributes

Industry-specific attributes

Model Number
FGL60N100BNTD
Type
RF TRANSISTOR
Brand Name
original brand
Package Type
Throught Hole

Other attributes

Mounting Type
through hole
Description
transistor
Place of Origin
California, United States
Package / Case
TO-220-3
Brand
IGBT 1000V 60A 180W TO264
Current - Collector (Ic) (Max)
60A
Voltage - Collector Emitter Breakdown (Max)
1000V
Power - Max
180W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
IGBT Type
NPT and Trench
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Type
Triode Transistor
Product Name
FGL60N100BNTD
IGBT Type
NPT and Trench
Voltage-Collector Emitter Breakdown(Max)
1000V
Current - Collector (Ic) (Max)
60A
Current - Collector Pulsed (Icm)
120A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Power - Max
180W
Input Type
Standard
Mounting Type
Through Hole
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Lead time

Quantity (pieces)1 - 10000 > 10000
Lead time (days)5To be negotiated

Product descriptions from the supplier

100 - 499 pieces
$1.90
500 - 999 pieces
$1.60
>= 1000 pieces
$1.50

Quantity

Shipping

Shipping solutions for the selected quantity are currently unavailable
Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

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