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      Hot Sale 18A 650V N-Channel Power MOSFET Transistor China Chip TO-220F Package For CCFL Energy-Saving Lamps

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      Aiko Electronics Technology Co., Ltd.1 yrCN
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      Key attributes

      Industry-specific attributes

      Model Number
      AKF18N65P

      Type
      MOSFET 

      Brand Name
      AIKO

      Package Type
      TO-220F

      Other attributes

      Mounting Type
      through holes

      Description
      Low Intrinsic Capacitances, Excellent Switching Characteristics, Extended Safe Operating Area, Unrivalled Gate Charge, 100% Avalanche Tested

      Place of Origin
      Zhejiang, China

      Package / Case
      TO-220F

      Type
      MOSFET transistor

      Operating Temperature
      -55℃~+150℃

      Series
      MOSFET

      Application
      high efficient DC to DC converters

      Supplier Type
      Original manufacturer, ODM

      Media Available
      datasheet, Photo

      Brand
      AKF18N65P 650V 18A N-Channel Power MOSFET

      Current - Collector (Ic) (Max)
      18A(TC=25℃), 11.5A(TC=100℃)

      Voltage - Collector Emitter Breakdown (Max)
      650V

      Vce Saturation (Max) @ Ib, Ic
      30V

      Current - Collector Cutoff (Max)
      18A

      Power - Max
      60W

      Operating Temperature
      -55°C ~ 150°C

      Mounting Type
      Through Hole

      Drain to Source Voltage (Vdss)
      650V

      Current - Continuous Drain (Id) @ 25°C
      18A

      Rds On (Max) @ Id, Vgs
      0.52 Ohm

      Vgs(th) (Max) @ Id
      4V

      Gate Charge (Qg) (Max) @ Vgs
      63nC

      Input Capacitance (Ciss) (Max) @ Vds
      2450pF @ 25V

      Current Rating (Amps)
      18A

      Voltage - Rated
      650V

      Drive Voltage (Max Rds On, Min Rds On)
      2.0V

      Vgs (Max)
      4.0V

      Configuration
      Single

      Vce(on) (Max) @ Vge, Ic
      10V

      Input Capacitance (Cies) @ Vce
      2450pF

      Voltage - Breakdown (V(BR)GSS)
      650V

      Current - Drain (Idss) @ Vds (Vgs=0)
      10-100uA

      Current Drain (Id) - Max
      18A

      Voltage - Cutoff (VGS off) @ Id
      30V

      Resistance - RDS(On)
      0.52 Ohm(Max.)

      Voltage - Output
      650V

      Voltage - Offset (Vt)
      ±30V

      Current - Valley (Iv)
      11.5A

      Current - Peak
      18A

      Applications
      fast switching

      Transistor Type
      MOSFET transistor, N-Channel, Enhancement Mode

      VDSS
      650V

      VGSS
      ±30V

      Drain Current(TC=25℃)
      18A

      Drain Current(TC=100℃)
      11.5A

      Single Pulse Avalanche Energy
      920mJ

      Maximum Power Dissipation(TC=25℃)
      60W

      Gate-body leakage Current, Forward
      100nA

      Gate Threshold Voltage
      2-4V

      Application 1
      UPS Applications

      Application 2
      DC-DC Converters and AC-DC Power Supply

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      Lead time

      Quantity (pieces)1 - 5000050001 - 100000000 > 100000000
      Lead time (days)2030To be negotiated

      Customization

      Customized logo
      Min. order: 100000
      Customized packaging
      Min. order: 100000
      Graphic customization
      Min. order: 100000
      For more customization details, message supplier

      Know your supplier

      Aiko Electronics Technology Co., Ltd.
      1 yrLocated in CN
      View more productsView profile

      Product descriptions from the supplier

      50000 - 99999999 pieces
      $0.20
      >= 100000000 pieces
      $0.05

      Variations

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