IRFB4115 original Mosfet Transistor N-Channel 150 V 104A 380W DIP TO-220AB IRFB4115PBF IRFB4115GPBF IRFB4115GPBF

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Dongguan Mixin Micro Semiconductor Co., Ltd.

Custom manufacturer4 yrs

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Key attributes

Industry-specific attributes

Model Number

IRFB4115PBF

Type

MOSFET

Brand Name

Original

Package Type

Through Hole

Other attributes

Mounting Type

Through Hole

Description

Transistor

Place of Origin

China

Package / Case

TO-220-3

Type

Transistors

Operating Temperature

-55°C ~ 175°C (TJ)

D/C

New

Application

Mosfet Transistor

Cross Reference

IRFB4115GPBF

Media Available

datasheet

Brand

IRFB4115PBF

Power - Max

380W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

150 V

Current - Continuous Drain (Id) @ 25°C

104A (Tc)

Rds On (Max) @ Id, Vgs

11mOhm @ 62A, 10V

Vgs(th) (Max) @ Id

5V @ 250uA

Gate Charge (Qg) (Max) @ Vgs

120 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

5270 pF @ 50 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Applications

Brand

Original

Stocking time

3-5day

delivery address

shenzhen

Lead time

Quantity (pieces)	1 - 10000	> 10000
Lead time (days)	3	To be negotiated

Customization

PCBA

Min. order: 1

SMT

Min. order: 1

PCB

Min. order: 1

BOM

Min. order: 1

For more customization details, message supplier

Product descriptions from the supplier

>= 1 pieces

$1.95

Variations

Total options:

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