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      IRGP4063DPBF IGBT Transistors Discrete Semiconductors Thyristor/Diode Module in stock original

      No reviews yet3 orders
      Shenzhen Walton Electronics Co., Ltd.Multispecialty supplier10 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      IRGP4063DPBF
      Type
      Transistors Discrete
      Brand Name
      original
      Package Type
      Through Hole

      Other attributes

      Mounting Type
      /
      Description
      /
      Place of Origin
      original
      Package / Case
      TO-247-3
      D/C
      /
      Application
      /
      Supplier Type
      Original manufacturer
      Media Available
      datasheet
      Brand
      IGBT Transistors
      Current - Collector (Ic) (Max)
      /
      Voltage - Collector Emitter Breakdown (Max)
      600 V
      Vce Saturation (Max) @ Ib, Ic
      /
      Current - Collector Cutoff (Max)
      /
      DC Current Gain (hFE) (Min) @ Ic, Vce
      /
      Power - Max
      /
      Frequency - Transition
      /
      Operating Temperature
      - 55 C
      Mounting Type
      Through Hole
      Resistor - Base (R1)
      /
      Resistor - Emitter Base (R2)
      /
      FET Type
      /
      FET Feature
      /
      Drain to Source Voltage (Vdss)
      /
      Current - Continuous Drain (Id) @ 25°C
      /
      Rds On (Max) @ Id, Vgs
      /
      Vgs(th) (Max) @ Id
      /
      Gate Charge (Qg) (Max) @ Vgs
      /
      Input Capacitance (Ciss) (Max) @ Vds
      /
      Frequency
      /
      Current Rating (Amps)
      /
      Noise Figure
      /
      Power - Output
      /
      Voltage - Rated
      /
      Drive Voltage (Max Rds On, Min Rds On)
      /
      Vgs (Max)
      /
      IGBT Type
      /
      Configuration
      Single
      Vce(on) (Max) @ Vge, Ic
      /
      Input Capacitance (Cies) @ Vce
      /
      Input
      /
      NTC Thermistor
      /
      Voltage - Breakdown (V(BR)GSS)
      /
      Current - Drain (Idss) @ Vds (Vgs=0)
      /
      Current Drain (Id) - Max
      /
      Voltage - Cutoff (VGS off) @ Id
      /
      Resistance - RDS(On)
      /
      Voltage
      /
      Voltage - Output
      /
      Voltage - Offset (Vt)
      /
      Current - Gate to Anode Leakage (Igao)
      /
      Current - Valley (Iv)
      /
      Current - Peak
      /
      Applications
      /
      Technology
      Si
      Collector- Emitter Voltage VCEO Max
      600 V
      Collector-Emitter Saturation Voltage
      2.14 V
      Maximum Gate Emitter Voltage
      20 V
      Continuous Collector Current at 25 C
      96 A
      Pd - Power Dissipation
      330 W
      Packaging
      Tube

      Packaging and delivery

      Packaging Details
      standard
      Port
      Shenzhen

      Supply Ability

      Supply Ability
      10000 Piece/Pieces per Month
      Show more

      Lead time

      Quantity (pieces)1 - 20000 > 20000
      Lead time (days)1To be negotiated

      Customization

      Customized logo
      Min. order: 500
      Customized packaging
      Min. order: 500
      Graphic customization
      Min. order: 500
      For more customization details, message supplier

      Product descriptions from the supplier

      1 - 24 pieces
      $9.47
      25 - 249 pieces
      $7.38
      >= 250 pieces
      $6.85

      Variations

      Total options:
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