Description
MOSFET 250V N-CH HEXFET
Place of Origin
Guangdong, China
Operating Temperature
-55°C ~ 175°C (TJ) standard
Series
-55°C ~ 175°C (TJ) standard
Supplier Type
Original manufacturer, ODM, Agency, Retailer
Media Available
datasheet, Photo
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Resistor - Emitter Base (R2)
-
FET Type
N-Channel, N-Channel
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
150A (Ta)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 100A, 6V
Vgs(th) (Max) @ Id
3.2V @ 250uA, 3.2V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
76nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
7820pF @ 40V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Description
MOSFET N-CH 80V 150A TO-220
Drain to Source Voltage
80V
Gate Charge @ Vgs
76nC @ 10V
Input Capacitance @ Vds
3.2V @ 250uA
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-220-3