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      JAN2N2907A TO-18-3 Discrete Semiconductors Transistors Bipolar (BJT) Transistor PNP 60V 600mA 500 mW Through Hole

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      Shenzhen Walton Electronics Co., Ltd.Multispecialty supplier10 yrsCN

      Key attributes

      Other attributes

      Place of Origin
      original
      Brand Name
      original
      Model Number
      JAN2N2907A
      Type
      /
      Collector- Emitter Voltage VCEO Max
      60 V
      Emitter- Base Voltage VEBO
      5 V
      Collector-Emitter Saturation Voltage
      400 mV
      Maximum DC Collector Current
      600 mA
      Minimum Operating Temperature
      - 65 C
      Maximum Operating Temperature
      + 200 C

      Packaging and delivery

      Packaging Details
      standard
      Port
      Shenzhen

      Supply Ability

      Supply Ability
      10000 Piece/Pieces per Month
      Show more

      Lead time

      Quantity (pieces)1 - 5000 > 5000
      Lead time (days)2To be negotiated

      Product descriptions from the supplier

      1 - 99 pieces
      $2.91
      100 - 999 pieces
      $2.65
      >= 1000 pieces
      $1.97

      Quantity

      Shipping

      Shipping solutions for the selected quantity are currently unavailable
      Item subtotal (0 variations 0 items)
      $0.00
      Shipping total
      $0.00
      Subtotal
      $0.00

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