Description
IGBT Modules 1200V 300A DUAL
Place of Origin
Guangdong, China
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Resistor - Emitter Base (R2)
-
Product Category:
IGBT Modules
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.7 V
Continuous Collector Current at 25 C:
440 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
1450 W
Package / Case:
IS5a ( 62 mm )-7
Operating Temperature
- 40 C to + 125 C