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      K39N60 600V 38.8A N-Channel Silicon Power MOS-FET Transistor K39N60W5

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      Shenzhen Dyd Technology Co., Ltd.3 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      K39n60w5

      Type
      -

      Brand Name
      JXD

      Package Type
      -

      Other attributes

      Place of Origin
      Germany

      Package / Case
      -

      D/C
      -

      Application
      Electronic

      Supplier Type
      Original manufacturer, ODM, Agency, Retailer

      Media Available
      datasheet, Photo

      Brand
      -

      Current - Collector (Ic) (Max)
      -

      Voltage - Collector Emitter Breakdown (Max)
      -

      Vce Saturation (Max) @ Ib, Ic
      -

      Current - Collector Cutoff (Max)
      -

      DC Current Gain (hFE) (Min) @ Ic, Vce
      -

      Power - Max
      -

      Frequency - Transition
      -

      Operating Temperature
      -, 150°C (TJ)

      Mounting Type
      -, Through Hole

      Resistor - Base (R1)
      -

      Resistor - Emitter Base (R2)
      -

      FET Type
      -

      Drain to Source Voltage (Vdss)
      -

      Current - Continuous Drain (Id) @ 25°C
      -

      Rds On (Max) @ Id, Vgs
      -, 74mOhm @ 19.4A, 10V

      Vgs(th) (Max) @ Id
      -, 4.5V @ 1.9mA

      Gate Charge (Qg) (Max) @ Vgs
      -, 135nC @ 10V

      Input Capacitance (Ciss) (Max) @ Vds
      -, 4100pF @ 300V

      Frequency
      -

      Current Rating (Amps)
      -

      Noise Figure
      -

      Power - Output
      -

      Voltage - Rated
      -

      Drive Voltage (Max Rds On, Min Rds On)
      -

      Vgs (Max)
      -, ±30V

      IGBT Type
      -

      Vce(on) (Max) @ Vge, Ic
      -

      Input Capacitance (Cies) @ Vce
      -

      Input
      -

      NTC Thermistor
      -

      Voltage - Breakdown (V(BR)GSS)
      -

      Current - Drain (Idss) @ Vds (Vgs=0)
      -

      Current Drain (Id) - Max
      -

      Voltage - Cutoff (VGS off) @ Id
      -

      Resistance - RDS(On)
      -

      Voltage
      -

      Voltage - Output
      -

      Voltage - Offset (Vt)
      -

      Current - Gate to Anode Leakage (Igao)
      -

      Current - Valley (Iv)
      -

      Current - Peak
      -

      Applications
      -

      Part Number
      K39N60W5

      Power Dissipation (Max)
      270W (Tc)

      Package/Case
      TO-247-3

      Packaging and delivery

      Packaging Details
      ESD / Vacuum / Foam / Cartons

      Port
      shenzhen

      Supply Ability

      Supply Ability
      88888 Piece/Pieces per Month

      Show more

      Lead time

      Quantity (pieces)1 - 10000 > 10000
      Lead time (days)8To be negotiated

      Customization

      Customized packaging
      Min. order: 5000
      For more customization details, message supplier

      Know your supplier

      Shenzhen Dyd Technology Co., Ltd.
      3 yrsLocated in CN
      View more productsView profile

      Product descriptions from the supplier

      10 - 199 pieces
      $3.00
      >= 200 pieces
      $2.00

      Quantity

      Shipping

      Shipping solutions for the selected quantity are currently unavailable
      Item subtotal (0 variations 0 items)
      $0.00
      Shipping total
      $0.00
      Subtotal
      $0.00

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