Description
General Purpose Amplifier
Place of Origin
Guangdong, China
Operating Temperature
-55-150C
Application
Power Switch Circuits
Supplier Type
Original manufacturer
Media Available
datasheet, Photo
Current - Collector (Ic) (Max)
25A
Voltage - Collector Emitter Breakdown (Max)
150V
Vce Saturation (Max) @ Ib, Ic
0
Current - Collector Cutoff (Max)
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
150V
Operating Temperature
-55-150
Mounting Type
Through Hole
Resistor - Emitter Base (R2)
0
FET Type
General Purpose Amplifier
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
600MA
Gate Charge (Qg) (Max) @ Vgs
0
Input Capacitance (Ciss) (Max) @ Vds
0
Current Rating (Amps)
600MA
Drive Voltage (Max Rds On, Min Rds On)
60V
Configuration
Not Applicable
Voltage - Breakdown (V(BR)GSS)
60V
Current Drain (Id) - Max
600MA
Current - Gate to Anode Leakage (Igao)
600MA
Current - Valley (Iv)
600MA
Transistor Type
General Purpose Amplifier