Description
The HC4407 uses advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V This device is suitable for use as a load switch or in PWM applications
Place of Origin
Guangdong, China
Type
P-Channel MOSFET HC4407A
Operating Temperature
-40 - 125℃
Series
Power Mosfet Transistor
Application
Power management
Supplier Type
Original manufacturer
Cross Reference
AO4407 NTMS4177P IRF7424 Si4155DY
Brand
P-Channel 30V 12A Power Mosfet
Voltage - Collector Emitter Breakdown (Max)
Standard
Vce Saturation (Max) @ Ib, Ic
Standard
DC Current Gain (hFE) (Min) @ Ic, Vce
Standard
Operating Temperature
150°C (TJ)
Resistor - Base (R1)
Standard
Resistor - Emitter Base (R2)
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
12A
Rds On (Max) @ Id, Vgs
14mΩ
Gate Charge (Qg) (Max) @ Vgs
20V
Input Capacitance (Ciss) (Max) @ Vds
Standard
Current Rating (Amps)
Standard
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Product Name
HC4407A AO4407
Parameter
P-Channel 30V 12A
Vds Drain-Source Voltage
30V
VGS Gate-Source Voltage
20V
Quality
100% Original 100% Brand