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NOVA Original 600V 120A 298W 60n60 DIP IGBT Transistor FGH60N60 FGH60N60UFDTU FGH60N60SFDTU FGH60N60SMD Electronic components
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ShenZhen Nova Semiconductor Co., Ltd
Brand holder
14 yrs
CN
Key attributes
Industry-specific attributes
Model Number
FGH60N60
Type
IGBT Transistor
Brand Name
Original
Package Type
Throught Hole
Other attributes
Mounting Type
Through Hole
Description
Transistor FGH60N60
Place of Origin
Original
Package / Case
TO-247-3
Type
Discrete Semiconductor Products
Operating Temperature
-55°C ~ 150°C (TJ)
Series
Transistors
D/C
New
Supplier Type
Other
Media Available
Other
Brand
FGH60N60
Current - Collector (Ic) (Max)
120 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
2.4V @ 15V, 60A
Power - Max
298 W
Frequency - Transition
/
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Brand
Original
Stocking time
3-5day
delivery address
shenzhen
Gate Charge
188 nC
Td (on/off) @ 25°C
23ns/130ns
Test Condition
400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)
47 ns
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Lead time
Quantity (pieces)
1 - 10
> 10
Lead time (days)
15
To be negotiated
Customization
PCBA
Min. order: 1
SMT
Min. order: 1
PCB
Min. order: 1
BOM
Min. order: 1
For more customization details,
message supplier
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ShenZhen Nova Semiconductor Co., Ltd
Brand holder
14 yrs
Located in CN
Supplies Fortune 500 companies
Registered trademarks (1)
Store rating
4.9/5
On-time delivery rate
100.0%
Response time
≤3h
Online revenue
$130,000+
Floorspace
315m²
Staff
29
Quality control
Raw-material traceability identification
Quality traceability
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Product descriptions from the supplier
>= 1 pieces
$0.10
Variations
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