New original imported electronic component MOS field-effect transistor G60N100 G60N100BNTD FGL60N100BNTD

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Shenzhen Zhengxinyuan Technology Co., Ltd.1 yr

CN

Key attributes

Industry-specific attributes

Model Number

FGL60N100BNTD

Type

transistor

Brand Name

standard

Package Type

Surface Mount

Other attributes

Mounting Type

standard

Description

Brand New Original

Place of Origin

standard

Package / Case

standard

Type

standard

Operating Temperature

standard

Series

standard

D/C

Newest

Application

standard

Supplier Type

ODM, Agency, Retailer

Media Available

datasheet, Photo, EDA/CAD Models, Other

Voltage - Collector Emitter Breakdown (Max)

standard

Vce Saturation (Max) @ Ib, Ic

standard

Current - Collector Cutoff (Max)

standard

DC Current Gain (hFE) (Min) @ Ic, Vce

standard

Operating Temperature

standard

Mounting Type

standard

Resistor - Base (R1)

standard

Package / Case

TO-220-3

Payment

Paypal\TT\Western Union\Trade Assurance

Package

Labels

Packaging and delivery

Packaging Details

Carton packaging

Lead time

Quantity (acres)	1 - 1	> 1
Lead time (days)	2	To be negotiated

Customization

Customized according to customer requirements

Min. order: 100

For more customization details, message supplier

Know your supplier

Shenzhen Zhengxinyuan Technology Co., Ltd.

1 yrLocated in CN

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Product descriptions from the supplier

1 - 49 acres

$0.12

>= 50 acres

$0.11

Quantity

Shipping

Shipping solutions for the selected quantity are currently unavailable

Item subtotal (0 variations 0 items)

$0.00

Shipping total

$0.00

Subtotal

$0.00

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