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Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3

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Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3
Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3
Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3
Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3
Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3
Original IKW75N60H3FKSA1 IKW75N60H3 IKW75N60 K75T60 IGBT Transistor N-CH 600V 80A 428W TO247-3

Key attributes

Industry-specific attributes

Model Number
IKW75N60H3
Type
Single IGBTs
Brand Name
original
Package Type
Throught Hole

Other attributes

Mounting Type
Through Hole
Description
IGBT 600V 80A 428W TO247-3
Place of Origin
original
Package / Case
TO-247-3
Type
Transistor
Operating Temperature
-40°C ~ 175°C (TJ)
Series
Single IGBTs
D/C
new
Application
-
Brand
IKW75N60H3FKSA1
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
-
Frequency - Transition
428 W
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Frequency
-
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-
IGBT Type
-
Configuration
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Resistance - RDS(On)
-
Voltage
-
Voltage - Output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
Current - Peak
-
Applications
-
Transistor Type
-
Brand
Original
Stocking time
3-5day
delivery address
shenzhen

Lead time

Product descriptions from the supplier

>= 100 pieces
$0.01

Variations

Total options:

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