Description
The HC3407A uses advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V This device is suitable for use as a load switch or in PWM applications
Place of Origin
Guangdong, China
Package / Case
SMD SOT23-3
Type
P-Channel MOSFET HC3407A AO3407A
Operating Temperature
-40 - 125℃
Series
Power Mosfet Transistor
Application
Power management
Supplier Type
Original manufacturer
Cross Reference
3407 AO3407 AO3407A SSM3J334R Si2343CDS IRLML9301
Media Available
datasheet, Photo
Brand
P-Channel 30V 5A Power Mosfet Transisto
Current - Collector (Ic) (Max)
5A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
Standard
DC Current Gain (hFE) (Min) @ Ic, Vce
Standard
Operating Temperature
Standard
Resistor - Base (R1)
Standard
Resistor - Emitter Base (R2)
Standard
Drain to Source Voltage (Vdss)
Standard
Current - Continuous Drain (Id) @ 25°C
Standard
Rds On (Max) @ Id, Vgs
Standard
Vgs(th) (Max) @ Id
Standard
Gate Charge (Qg) (Max) @ Vgs
Standard
Input Capacitance (Ciss) (Max) @ Vds
Standard
Current Rating (Amps)
Standard
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Transistor Type
Power Mosfet Transistor
Transistors Mosfet
HC3407A
Payment
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Quality
100% Original 100% Brand