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      PDTD113ET Transistor Electronic component Other ics Silicon controlled

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      Shenzhen Boshengyuan Technology Co., Ltd.2 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      PDTD113ET
      Type
      Standard
      Brand Name
      Original
      Package Type
      Surface Mount

      Other attributes

      Mounting Type
      PCB
      Description
      New
      Place of Origin
      Negeri Sembilan, Malaysia
      Package / Case
      SOT-23
      Type
      Transistor
      Operating Temperature
      Standard
      Series
      Transistor
      D/C
      New
      Application
      Original
      Supplier Type
      Other
      Current - Collector (Ic) (Max)
      Original
      Voltage - Collector Emitter Breakdown (Max)
      Original
      Vce Saturation (Max) @ Ib, Ic
      Original
      Current - Collector Cutoff (Max)
      Original
      DC Current Gain (hFE) (Min) @ Ic, Vce
      Original
      Power - Max
      Original
      Frequency - Transition
      Original
      Operating Temperature
      Original
      Mounting Type
      PCB
      Resistor - Base (R1)
      Original
      Resistor - Emitter Base (R2)
      Original
      FET Type
      Original
      FET Feature
      Original
      Drain to Source Voltage (Vdss)
      Original
      Current - Continuous Drain (Id) @ 25°C
      Original
      Rds On (Max) @ Id, Vgs
      Original
      Vgs(th) (Max) @ Id
      Original
      Gate Charge (Qg) (Max) @ Vgs
      Original
      Input Capacitance (Ciss) (Max) @ Vds
      Original
      Frequency
      Original
      Current Rating (Amps)
      Original
      Noise Figure
      Original
      Power - Output
      Original
      Voltage - Rated
      Original
      Drive Voltage (Max Rds On, Min Rds On)
      Original
      Vgs (Max)
      Original
      IGBT Type
      Original
      Configuration
      Original
      Vce(on) (Max) @ Vge, Ic
      Original
      Input Capacitance (Cies) @ Vce
      Original
      Input
      Original
      NTC Thermistor
      Original
      Voltage - Breakdown (V(BR)GSS)
      Original
      Current - Drain (Idss) @ Vds (Vgs=0)
      Original
      Current Drain (Id) - Max
      Original
      Voltage - Cutoff (VGS off) @ Id
      Original
      Resistance - RDS(On)
      Original
      Voltage
      Original
      Voltage - Output
      Original
      Voltage - Offset (Vt)
      Original
      Current - Gate to Anode Leakage (Igao)
      Original
      Current - Valley (Iv)
      Original
      Current - Peak
      Original
      Applications
      Original
      Transistor Type
      Original
      Price
      Due to exchange rate fluctuations, please consult before purchasing.
      Protpm
      We can order any electronic components, welcome to consult.
      WhatsApp
      +86 19536087717
      Lead Time
      Delivery with 1-2 days after receipt of payment.
      Type
      integrated circuit
      Operating Temperature
      -40℃ ~ 85℃
      Description
      Original
      Applications
      Household communication Automobile aerospace
      Output Type
      SRAM
      Voltage - Supply
      2V ~ 3.6V

      Packaging and delivery

      Selling Units:
      Single item
      Single package size:
      XX cm
      Single gross weight:
      kg
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      Lead time

      Quantity (pieces)1 - 10000 > 10000
      Lead time (days)3To be negotiated

      Product descriptions from the supplier

      >= 1 pieces
      $0.01

      Variations

      Total options:
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